Microchip Technology, Inc. Single Bipolar Transistors MNS2N3501UBP

NPN silicon switching transistor in a ceramic surface mount U4 package for high-reliability applications, with a 150 V collector-emitter voltage, 300 mA collector current, and 500 mW power dissipation at 25°C. Thermal resistance junction-to-solder pad is 90°C/W. Qualified to MIL-PRF-19500/366 for JAN, JANTX, JANTXV, and JANS levels. RoHS compliant by design. Dimensions are 2.92-3.25 mm in length, 2.16-2.74 mm in width, and 1.17-1.42 mm in height.