Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
2N7002PV - 60 V, 350 mA dual N-channel Trench MOSFET SOT 6-Pin Product overview: 2N7002PV,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60 V, 350 mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60 V, 350 mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-2N7002PV,115 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666
Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666
Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004064-2N7002PV,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-666
Maximum Power Dissipation: 330mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 350mA
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 0.8nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 60V 0.35A SOT-666
MOSFET 2N-CH 60V 0.35A SOT666
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N7002PV,115 | 289-2N7002PV,115 | 1727-4792-6-ND | 1004064-2N7002PV,115 | 2N7002PV,115 | 2N7002PV,115 |
| Product Name | 60 V, 350 mA dual N-channel Trench MOSFET | N-Channel Dual 60 V 350 mA MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PV,115 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||
| IDSS | 350 milliamps | 350 milliamps | ||||
| VGS(off) | 1.75 volts |
