- Trained on our vast library of engineering resources.

Nexperia B.V. 60 V, 350 mA dual N-channel Trench MOSFET 2N7002PV,115

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 350 mA dual N-channel Trench MOSFET - 2N7002PV,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 350 mA dual N-channel Trench MOSFET
2N7002PV,115
60 V, 350 mA dual N-channel Trench MOSFET 2N7002PV,115
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Discrete Semiconductor - 2N7002PV,115 - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
2N7002PV,115
Discrete Semiconductor 2N7002PV,115
MOSFET 2N-CH 60V 0.35A SOT-666

MOSFET 2N-CH 60V 0.35A SOT-666

Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-4792-6-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-4792-6-ND
FET, MOSFET Arrays 1727-4792-6-ND
Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666

Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666

Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-4792-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-4792-2-ND
FET, MOSFET Arrays 1727-4792-2-ND
Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666

Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666

Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-4792-1-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-4792-1-ND
FET, MOSFET Arrays 1727-4792-1-ND
Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666

Mosfet Array 2 N-Channel (Dual) 60V 350mA 330mW Surface Mount SOT-666

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002PV,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002PV,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002PV,115
MOSFET 2N-CH 60V 0.35A SOT666

MOSFET 2N-CH 60V 0.35A SOT666

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PV,115 - 1004064-2N7002PV,115 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PV,115
1004064-2N7002PV,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PV,115 1004064-2N7002PV,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1004064-2N7002PV,115 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-666 Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 350mA Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 0.8nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004064-2N7002PV,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-666
Maximum Power Dissipation: 330mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 350mA
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 0.8nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. LIXINC Electronics Co., Limited DigiKey Shenzhen Shengyu Electronics Technology Limited Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002PV,115 2N7002PV,115 1727-4792-6-ND 2N7002PV,115 1004064-2N7002PV,115
Product Name 60 V, 350 mA dual N-channel Trench MOSFET Discrete Semiconductor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002PV,115
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
IDSS 350 milliamps
VGS(off) 1.75 volts
Unlock Full Specs
to access all available technical data

Similar Products

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 - BUK7S0R7-40HJ - Nexperia B.V.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
View Details
6 suppliers
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET - PBSM5240PFH,115 - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
Package Type SOT1118
View Details
4 suppliers
Dual N-channel 100 V, 121 mΩ standard level MOSFET - BUK7K134-100EX - Nexperia B.V.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
View Details
5 suppliers
60 V, N-channel Trench MOSFET - NX138BKWF - Nexperia B.V.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
View Details
4 suppliers