Microchip Technology, Inc. Single Bipolar Transistors MNS2N3501P

NPN silicon transistor for high-reliability applications, available in TO-39 (TO-205AD) package with hermetically sealed kovar base and nickel cap. Rated for a collector-emitter voltage of 150 V, collector current of 300 mA, and total power dissipation of 1.5 W at 25°C ambient. Thermal resistance junction-to-ambient is 175°C/W and junction-to-case is 30°C/W. Operating and storage junction temperature range is -65°C to +200°C. Features a minimum forward-current transfer ratio of 20 at 300 mA collector current and collector-emitter saturation voltage of 0.6 V at 300 mA collector and 30 mA base current.