Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N2907AUBP

PNP silicon transistor for general-purpose amplification and switching, housed in a surface-mount UB package with three leads and a shielded ceramic lid. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. The device meets MIL-PRF-19500/291 qualification standards, with forward current transfer ratio (hFE) ranging from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Turn-on time is 45 μs and turn-off time is 300 μs under pulse test conditions with 150 mA collector current and 50 mA base current.