Microchip Technology, Inc. Single Bipolar Transistors JANTX2N2432UB

NPN silicon low-power transistor in UB package for surface mount applications, rated for a collector-emitter voltage of 30 Vdc and collector current of 100 mAdc, with a total power dissipation of 360 mW at Tc = +83°C and junction temperature range of -65 to +200°C. The device complies with MIL-PRF-19500/313 and has a thermal resistance junction-to-solder pads of 95 °C/W. Package dimensions align with TO-18 format, with leads defined as emitter, base, and collector.