Radiation-hardened PNP silicon switching transistor for high-reliability applications, packaged in a surface-mount UB-style ceramic lid configuration with 4 pins. Rated for collector-emitter voltage up to 60 Vdc and collector current of 600 mAdc, with a total power dissipation of 0.5 W at 25 °C. Junction temperature range is -65 °C to +200 °C. Qualified to 100 krad(Si) total ionizing dose per JANU specification. Thermal resistance junction-to-ambient is 325 °C/W. Meets MIL-PRF-19500/255 qualification standards.
TRANS PNP 60V 0.6A UB
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 150-JANSU2N2907AUB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |
