Microchip Technology, Inc. RF & MW Power Amplifier ICP2637-1-351I

Description
ICP2637P is a three stage MMIC power amplifier in a 5x5mm QFN package, fabricated using GaN on SiC technology. The PA operates from 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50 ohms on the RF input and output ports. The operating frequency provides flexible operation for a variety of applications including satellite and 5G. The ICP2637P is 100% DC and RF tested on-wafer to ensure compliance with electrical specifications.
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Description
ICP2637P is a three stage MMIC power amplifier in a 5x5mm QFN package, fabricated using GaN on SiC technology. The PA operates from 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50 ohms on the RF input and output ports. The operating frequency provides flexible operation for a variety of applications including satellite and 5G. The ICP2637P is 100% DC and RF tested on-wafer to ensure compliance with electrical specifications.
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Suppliers

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Product
Description
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RF & MW Power Amplifier - ICP2637-1-351I - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ICP2637-1-351I
RF & MW Power Amplifier ICP2637-1-351I
ICP2637P is a three stage MMIC power amplifier in a 5x5mm QFN package, fabricated using GaN on SiC technology. The PA operates from 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50 ohms on the RF input and output ports. The operating frequency provides flexible operation for a variety of applications including satellite and 5G. The ICP2637P is 100% DC and RF tested on-wafer to ensure compliance with electrical specifications.

ICP2637P is a three stage MMIC power amplifier in a 5x5mm QFN package, fabricated using GaN on SiC technology. The PA operates from 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50 ohms on the RF input and output ports. The operating frequency provides flexible operation for a variety of applications including satellite and 5G. The ICP2637P is 100% DC and RF tested on-wafer to ensure compliance with electrical specifications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ICP2637-1-351I
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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