Microchip Technology, Inc. 1Mb 4.5-5.5V Parallel Flash en549492

Description
The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories. Additional Features Organized as 128K x8 / 256K x8 / 512K x8 Single 4.5-5.5V Read and Write Operations Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical) Sector-Erase Capability– Uniform 4 KByte sectors Fast Read Access Time:– 55 ns– 70 ns Latched Address and Data Automatic Write Timing– Internal VPP Generation Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040 End-of-Write Detection– Toggle Bit– Data# Polling TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP All devices are RoHS compliant All non-Pb (lead-free) devices are RoHS compliant
Datasheet
Description
The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories. Additional Features Organized as 128K x8 / 256K x8 / 512K x8 Single 4.5-5.5V Read and Write Operations Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical) Sector-Erase Capability– Uniform 4 KByte sectors Fast Read Access Time:– 55 ns– 70 ns Latched Address and Data Automatic Write Timing– Internal VPP Generation Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040 End-of-Write Detection– Toggle Bit– Data# Polling TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP All devices are RoHS compliant All non-Pb (lead-free) devices are RoHS compliant
Datasheet

Suppliers

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1Mb 4.5-5.5V Parallel Flash - en549492 - Microchip Technology, Inc.
Chandler, AZ, United States
1Mb 4.5-5.5V Parallel Flash
en549492
1Mb 4.5-5.5V Parallel Flash en549492
The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories. Additional Features Organized as 128K x8 / 256K x8 / 512K x8 Single 4.5-5.5V Read and Write Operations Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical) Sector-Erase Capability– Uniform 4 KByte sectors Fast Read Access Time:– 55 ns– 70 ns Latched Address and Data Automatic Write Timing– Internal VPP Generation Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040 End-of-Write Detection– Toggle Bit– Data# Polling TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP All devices are RoHS compliant All non-Pb (lead-free) devices are RoHS compliant

The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

Additional Features

  • Organized as 128K x8 / 256K x8 / 512K x8
  • Single 4.5-5.5V Read and Write Operations
  • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
  • Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)
  • Sector-Erase Capability– Uniform 4 KByte sectors
  • Fast Read Access Time:– 55 ns– 70 ns
  • Latched Address and Data
  • Automatic Write Timing– Internal VPP Generation
  • Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040
  • End-of-Write Detection– Toggle Bit– Data# Polling
  • TTL I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP
  • All devices are RoHS compliant
  • All non-Pb (lead-free) devices are RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number en549492
Product Name 1Mb 4.5-5.5V Parallel Flash
Memory Category Flash
Access Time 55 ns
Data Retention 100 years
Endurance 100000 Write/Erase Cycles
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