Infineon Technologies AG Memory 8611200818

Description
INTEGRATED CIRCUIT
  • Memory - 8611200818 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - 8611200818 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
INTEGRATED CIRCUIT
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 8611200818 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
8611200818
Memory 8611200818
INTEGRATED CIRCUIT

INTEGRATED CIRCUIT

Supplier's Site Datasheet
Memory - 8611200818 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
8611200818
Memory 8611200818
Memory IC

Memory IC

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 8611200818 8611200818
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

- 27C010-120DI - Rochester Electronics
Rochester Electronics
Integrated Circuits (ICs) - Memory - Memory
27C010-120DI
Specs
Memory Category EPROM
Logic Family CMOS
Package Type DIP; CDIP32
View Details
4 suppliers
Memory - 5962-9232404MYA-ND - DigiKey
Infineon Technologies AG
Memory
5962-9232404MYA
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type 28-LCC
View Details
3 suppliers
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420773P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8E128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details