Advanced Linear Devices, Inc. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY ALD110914SAL

The ALD110914SAL is a dual N-channel enhancement mode MOSFET array fabricated using EPAD® CMOS technology for precise matched pair applications in low-voltage analog circuits. It is housed in an 8-pin SOIC package measuring 4.69 to 5.00 mm in length and 3.50 to 4.05 mm in width. The devices feature a typical gate threshold voltage of 1.40 V with a match between devices to within 10 mV, a maximum drain-source voltage of 10.6 V, and a power dissipation rating of 500 mW. Drain-source on resistance is 500 Ω at VGS = +5.4 V and VDS = +0.1 V. Input leakage current is specified at 30 pA at 25°C. The part is rated for operation from 0°C to +70°C and meets RoHS requirements. High input impedance of 10^12 Ω and low input capacitance of 2.5 pF enable use in precision current mirrors, differential amplifiers, and sample-and-hold circuits.