Home

Products & Services

Engineering News

Standards

Webinars

Engineering Forum

Microchip Technology, Inc. Memory AT28HC256F-12SA

Description

EEPROM Memory IC 256Kbit Parallel 120 ns 28-SOIC

Quarktwin Technology Ltd.
Lingto Electronic Limited

Datasheet

Description

EEPROM Memory IC 256Kbit Parallel 120 ns 28-SOIC

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Memory - AT28HC256F-12SA - Quarktwin Technology Ltd.

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
AT28HC256F-12SA

Memory AT28HC256F-12SA

EEPROM Memory IC 256Kbit Parallel 120 ns 28-SOIC

Buy Now

Memory - AT28HC256F-12SA - Lingto Electronic Limited

Lingto Electronic Limited

Shenzhen, China

Memory
AT28HC256F-12SA

Memory AT28HC256F-12SA

IC EEPROM 256KBIT PAR 28SOIC

Supplier's Site

Datasheet

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	AT28HC256F-12SA	AT28HC256F-12SA
Product Name	Memory	Memory
Memory Category	EEPROM; EEPROM	EEPROM; EEPROM
Access Time	120 ns	120 ns
Operating Temperature	-40 to 125 C (-40 to 257 F)

Unlock Full Specs

to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - 93Z451LMQB - Shenzhen Shengyu Electronics Technology Limited

Texas Instruments

Integrated Circuits (ICs) - Memory - Memory

Specs

Memory Category PROM; Non-Volatile

Density 8 kbits

Supply Voltage -55degC ~ 125degC (TC)

2 suppliers

Memory - 71124S15YGI - Lingto Electronic Limited

Rochester Electronics

Specs

Memory Category SRAM; SRAM Chip

Access Time 15 ns

Density 1000 kbits

Infineon Technologies AG

Integrated Circuits (ICs) - Memory - Memory

Memory - AS29LV016D - Micross Components, Inc.

Micross Components, Inc.

Specs

Memory Category FLASH

Access Time 70 ns

Operating Temperature -55 to 125 C (-67 to 257 F)