Microchip Technology, Inc. Memory AT28HC256-70JC

Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 70ns 32-PLCC (13.97x11.43)
Request a Quote
Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 70ns 32-PLCC (13.97x11.43)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The AT28HC256-70JC is a high-performance electrically erasable and programmable read-only memory (EEPROM) with a capacity of 256K bits, organized as 32,768 words by 8 bits. It features a fast read access time of 70 ns and supports automatic page write operations, allowing for the writing of 1 to 64 bytes in a single cycle with a maximum page write cycle time of 3 ms or 10 ms. The device operates on a single 5V ± 10% supply and has low power dissipation, with an active current of 80 mA and a standby current of 3 mA. The AT28HC256 incorporates hardware and software data protection mechanisms, ensuring data integrity during write operations. It also includes a DATA polling feature for end-of-write detection, enhancing usability. The memory is built using high-reliability CMOS technology, offering an endurance of 10^4 to 10^5 cycles and a data retention period of up to 10 years. The device is compatible with both CMOS and TTL logic levels and is available in various package options, including a JEDEC approved byte-wide pinout. This product is suitable for applications requiring reliable non-volatile memory with fast access and low power consumption.

Datasheet Summary
Powered by GS/AI

The AT28HC256-70JC is a high-performance electrically erasable and programmable read-only memory (EEPROM) with a capacity of 256K bits, organized as 32,768 words by 8 bits. It features a fast read access time of 70 ns and supports automatic page write operations, allowing for the writing of 1 to 64 bytes in a single cycle with a maximum page write cycle time of 3 ms or 10 ms. The device operates on a single 5V ± 10% supply and has low power dissipation, with an active current of 80 mA and a standby current of 3 mA. The AT28HC256 incorporates hardware and software data protection mechanisms, ensuring data integrity during write operations. It also includes a DATA polling feature for end-of-write detection, enhancing usability. The memory is built using high-reliability CMOS technology, offering an endurance of 10^4 to 10^5 cycles and a data retention period of up to 10 years. The device is compatible with both CMOS and TTL logic levels and is available in various package options, including a JEDEC approved byte-wide pinout. This product is suitable for applications requiring reliable non-volatile memory with fast access and low power consumption.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28HC256-70JC-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) Parallel 70ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kb (32K x 8) Parallel 70ns 32-PLCC (13.97x11.43)

Buy Now Datasheet
IC EEPROM 256KBIT PAR 32PLCC

IC EEPROM 256KBIT PAR 32PLCC

Supplier's Site Datasheet
Memory - AT28HC256-70JC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 70 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit Parallel 70 ns 32-PLCC (13.97x11.43)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AT28HC256-70JC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28HC256-70JC
Integrated Circuits (ICs) - Memory AT28HC256-70JC
IC EEPROM 256KBIT PAR 32PLCC

IC EEPROM 256KBIT PAR 32PLCC

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28HC256-70JC-ND AT28HC256-70JC AT28HC256-70JC AT28HC256-70JC
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type PLCC; 32-LCC (J-Lead) 32-LCC (J-Lead)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 8 909 002 174 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
7 suppliers
Memory - RAM - MT5C1008ECA55L883C - 1232483-MT5C1008ECA55L883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Flash Memory - 1882861P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details