Microchip Technology, Inc. Memory AT28C010-25SI

Description
EEPROM Memory IC 1Mbit Parallel 250 ns 32-SOP
Datasheet
Description
EEPROM Memory IC 1Mbit Parallel 250 ns 32-SOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C010-25SI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Mbit Parallel 250 ns 32-SOP

EEPROM Memory IC 1Mbit Parallel 250 ns 32-SOP

Buy Now
Integrated Circuits (ICs) - Memory - AT28C010-25SI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28C010-25SI
Integrated Circuits (ICs) - Memory AT28C010-25SI
IC EEPROM 1MBIT PARALLEL 32SOIC

IC EEPROM 1MBIT PARALLEL 32SOIC

Supplier's Site
IC EEPROM 1MBIT PARALLEL 32SOIC

IC EEPROM 1MBIT PARALLEL 32SOIC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT28C010-25SI AT28C010-25SI AT28C010-25SI
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 250 ns 250 ns 250 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
Memory - 457780-5790 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
 - LP3913SQ-AD/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details