Microchip Technology, Inc. Memory AT28BV64-25PC

Description
EEPROM Memory IC 64Kbit Parallel 250 ns 28-PDIP
Datasheet
Description
EEPROM Memory IC 64Kbit Parallel 250 ns 28-PDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28BV64-25PC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit Parallel 250 ns 28-PDIP

EEPROM Memory IC 64Kbit Parallel 250 ns 28-PDIP

Buy Now
IC EEPROM 64KBIT PARALLEL 28DIP

IC EEPROM 64KBIT PARALLEL 28DIP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT28BV64-25PC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28BV64-25PC
Integrated Circuits (ICs) - Memory AT28BV64-25PC
IC EEPROM 64KBIT PARALLEL 28DIP

IC EEPROM 64KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT28BV64-25PC AT28BV64-25PC AT28BV64-25PC
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 250 ns 250 ns 250 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 10422DCQR - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - CAT24C02VP2E-GT3 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
Flash Memory - 1882749P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory - MYXXXXX16MP8PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details