Microchip Technology, Inc. Memory AT28BV256-20TA

Description
EEPROM Memory IC 256Kbit Parallel 200 ns 28-TSOP
Datasheet
Description
EEPROM Memory IC 256Kbit Parallel 200 ns 28-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28BV256-20TA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 200 ns 28-TSOP

EEPROM Memory IC 256Kbit Parallel 200 ns 28-TSOP

Buy Now
IC EEPROM 256KBIT PAR 28TSOP

IC EEPROM 256KBIT PAR 28TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number AT28BV256-20TA AT28BV256-20TA
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Access Time 200 ns 200 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821404VXF - 5962R1821404VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details
Memory - 71024S12YG8 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Flash Memory - 1882874 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - AS8S128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details