Microchip Technology, Inc. 1000V/Full bridge/Si Mosfet modules APTM100H45FT3G-Module

Description
FREDFETs Low RDSon Low input and Miller capacitance Low gate charge Fast intrinsic reverse diode Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) RoHS Compliant Additional Features Configuration: Full bridge VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 14 Silicon type: FREDFET Package: SP3F
Description
FREDFETs Low RDSon Low input and Miller capacitance Low gate charge Fast intrinsic reverse diode Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) RoHS Compliant Additional Features Configuration: Full bridge VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 14 Silicon type: FREDFET Package: SP3F
Datasheet
Datasheet Summary
Powered by GS/AI

The APTM100H45FT3G module from Microchip Technology, Inc. is a full-bridge MOSFET power module designed for high-voltage applications with a maximum drain-source voltage (VDSS) of 1000V. It features a low on-resistance (RDS(on)) of 450mOc at 25¬8C, allowing for efficient power management. The module supports a continuous drain current of 18A at a case temperature of 25¬8C, and 14A at 80¬8C, making it suitable for demanding applications such as welding converters and switched mode power supplies. This module incorporates Power MOS 7¬Æ FREDFET technology, which provides low input and Miller capacitance, low gate charge, and a fast intrinsic reverse diode. It is avalanche energy rated and designed to be rugged, with a low thermal resistance from junction to case, facilitating effective heat dissipation. The internal thermistor allows for temperature monitoring, enhancing reliability during operation. The APTM100H45FT3G is RoHS compliant and features solderable terminals for easy PCB mounting. Its design includes a Kelvin source for straightforward driving and low stray inductance, making it ideal for high-frequency applications. The module is packaged in an isolated SP3F format, allowing for direct mounting to a heatsink.

Datasheet Summary
Powered by GS/AI

The APTM100H45FT3G module from Microchip Technology, Inc. is a full-bridge MOSFET power module designed for high-voltage applications with a maximum drain-source voltage (VDSS) of 1000V. It features a low on-resistance (RDS(on)) of 450mOc at 25¬8C, allowing for efficient power management. The module supports a continuous drain current of 18A at a case temperature of 25¬8C, and 14A at 80¬8C, making it suitable for demanding applications such as welding converters and switched mode power supplies. This module incorporates Power MOS 7¬Æ FREDFET technology, which provides low input and Miller capacitance, low gate charge, and a fast intrinsic reverse diode. It is avalanche energy rated and designed to be rugged, with a low thermal resistance from junction to case, facilitating effective heat dissipation. The internal thermistor allows for temperature monitoring, enhancing reliability during operation. The APTM100H45FT3G is RoHS compliant and features solderable terminals for easy PCB mounting. Its design includes a Kelvin source for straightforward driving and low stray inductance, making it ideal for high-frequency applications. The module is packaged in an isolated SP3F format, allowing for direct mounting to a heatsink.

Suppliers

Company
Product
Description
Supplier Links
1000V/Full bridge/Si Mosfet modules - APTM100H45FT3G-Module - Microchip Technology, Inc.
Chandler, AZ, United States
1000V/Full bridge/Si Mosfet modules
APTM100H45FT3G-Module
1000V/Full bridge/Si Mosfet modules APTM100H45FT3G-Module
FREDFETs Low RDSon Low input and Miller capacitance Low gate charge Fast intrinsic reverse diode Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) RoHS Compliant Additional Features Configuration: Full bridge VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 14 Silicon type: FREDFET Package: SP3F
  • FREDFETs
  • Low RDSon
  • Low input and Miller capacitance
  • Low gate charge
  • Fast intrinsic reverse diode
  • Avalanche energy rated
  • Very rugged
  • Kelvin source for easy drive
  • Low stray inductance
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Internal thermistor for temperature monitoring (optional)
  • RoHS Compliant

Additional Features

    • Configuration: Full bridge
    • VDSS (V): 1000
    • RDSon (mR) typ: 450
    • Current (A) Tc=80C: 14
    • Silicon type: FREDFET
    • Package: SP3F
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number APTM100H45FT3G-Module
Product Name 1000V/Full bridge/Si Mosfet modules
Technology MOSFET
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules PIM - 6th-Gen V Series Model: 7MBR20VKC060-50 - Fuji Electric Corp. of America
Specs
Technology IGBT
Package M728
Output Voltage 600 volts
View Details
Full Half-Bridge (H Bridge) Drivers - IRSM505-084PA-IR - ODG (Origin Data Global)
Specs
Technology Intelligent Power Module (IPM)
Input Voltage 13.5 to 16.5 volts
View Details
600V Field Stop IGBT - IGBT-FIELDSTOP-600V - Microchip Technology, Inc.
Specs
Technology IGBT
View Details
flow 3xBOOST 1 Power Module - 10-FY123BA080SH03-LN28L47 - Vincotech GmbH
Specs
Technology IGBT; IGBT4 HS
Configuration Booster
Output Voltage 1200 volts
View Details