FREDFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Internal thermistor for temperature monitoring (optional)
RoHS Compliant
Additional Features
Configuration: Full bridge
VDSS (V): 1000
RDSon (mR) typ: 450
Current (A) Tc=80C: 14
Silicon type: FREDFET
Package: SP3F
Microchip Technology, Inc.
Done
Description
FREDFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Internal thermistor for temperature monitoring (optional)
RoHS Compliant
Additional Features
Configuration: Full bridge
VDSS (V): 1000
RDSon (mR) typ: 450
Current (A) Tc=80C: 14
Silicon type: FREDFET
Package: SP3F
Datasheet
Datasheet Summary Powered by GS/AI
The APTM100H45FT3G module from Microchip Technology, Inc. is a full-bridge MOSFET power module designed for high-voltage applications with a maximum drain-source voltage (VDSS) of 1000V. It features a low on-resistance (RDS(on)) of 450mOc at 25¬8C, allowing for efficient power management. The module supports a continuous drain current of 18A at a case temperature of 25¬8C, and 14A at 80¬8C, making it suitable for demanding applications such as welding converters and switched mode power supplies.
This module incorporates Power MOS 7® FREDFET technology, which provides low input and Miller capacitance, low gate charge, and a fast intrinsic reverse diode. It is avalanche energy rated and designed to be rugged, with a low thermal resistance from junction to case, facilitating effective heat dissipation. The internal thermistor allows for temperature monitoring, enhancing reliability during operation.
The APTM100H45FT3G is RoHS compliant and features solderable terminals for easy PCB mounting. Its design includes a Kelvin source for straightforward driving and low stray inductance, making it ideal for high-frequency applications. The module is packaged in an isolated SP3F format, allowing for direct mounting to a heatsink.
Datasheet Summary Powered by GS/AI
The APTM100H45FT3G module from Microchip Technology, Inc. is a full-bridge MOSFET power module designed for high-voltage applications with a maximum drain-source voltage (VDSS) of 1000V. It features a low on-resistance (RDS(on)) of 450mOc at 25¬8C, allowing for efficient power management. The module supports a continuous drain current of 18A at a case temperature of 25¬8C, and 14A at 80¬8C, making it suitable for demanding applications such as welding converters and switched mode power supplies.
This module incorporates Power MOS 7® FREDFET technology, which provides low input and Miller capacitance, low gate charge, and a fast intrinsic reverse diode. It is avalanche energy rated and designed to be rugged, with a low thermal resistance from junction to case, facilitating effective heat dissipation. The internal thermistor allows for temperature monitoring, enhancing reliability during operation.
The APTM100H45FT3G is RoHS compliant and features solderable terminals for easy PCB mounting. Its design includes a Kelvin source for straightforward driving and low stray inductance, making it ideal for high-frequency applications. The module is packaged in an isolated SP3F format, allowing for direct mounting to a heatsink.
FREDFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Internal thermistor for temperature monitoring (optional)
RoHS Compliant
Additional Features
Configuration: Full bridge
VDSS (V): 1000
RDSon (mR) typ: 450
Current (A) Tc=80C: 14
Silicon type: FREDFET
Package: SP3F
FREDFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Internal thermistor for temperature monitoring (optional)