Microchip Technology, Inc. 650V/Full bridge/IGBT modules APTGLQ100H65T3G-Module

Description
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 100 Silicon type: TRENCH 3 FAST Package: SP3F
Datasheet
Description
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 100 Silicon type: TRENCH 3 FAST Package: SP3F
Datasheet

Suppliers

Company
Product
Description
Supplier Links
650V/Full bridge/IGBT modules - APTGLQ100H65T3G-Module - Microchip Technology, Inc.
Chandler, AZ, United States
650V/Full bridge/IGBT modules
APTGLQ100H65T3G-Module
650V/Full bridge/IGBT modules APTGLQ100H65T3G-Module
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 100 Silicon type: TRENCH 3 FAST Package: SP3F
  • IGBT 3 fast
  • Low voltage drop
  • Low leakage current
  • Low switching losses
  • Kelvin emitter for easy drive
  • Low stray inductance
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Internal thermistor for temperature monitoring (optional)
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS Compliant

Additional Features

    • Configuration: Full bridge
    • VCES (V): 650
    • VCESat (V): 1.85
    • Current (A) Tc=80C: 100
    • Silicon type: TRENCH 3 FAST
    • Package: SP3F
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number APTGLQ100H65T3G-Module
Product Name 650V/Full bridge/IGBT modules
Technology IGBT
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules 6-Pack - 6th-Gen V Series Model 6MBI450V-170-50 - Fuji Electric Corp. of America
Specs
Technology IGBT
Configuration Six-Pack
Package M629
View Details
Intelligent Power Modules (IPM) - IM818-MCC - Infineon Technologies AG
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package DIP 36x23D
View Details
600V Punch-Thru IGBT - IGBT-PT-600V - Microchip Technology, Inc.
Microchip Technology, Inc.
Specs
Technology IGBT
Package SOT-227, TO-247, TO-247-MAX, TO-264, TO-264-MAX, TO-268
View Details
flow PIM® 0 Power Module - 10-FU07PMA030I7-P546B66 - Vincotech GmbH
Specs
Technology IGBT; IGBT7
Configuration PIM (CIB)
Output Voltage 650 volts
View Details