Microchip Technology, Inc. 650V/Full bridge/IGBT modules APTGLQ200H65G-Module

Description
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 200 Silicon type: TRENCH 3 FAST Package: SP6C
  • 650V/Full bridge/IGBT modules - APTGLQ200H65G-Module - Microchip Technology, Inc.
    Microchip Technology, Inc.
Datasheet
Description
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 200 Silicon type: TRENCH 3 FAST Package: SP6C
Datasheet

Suppliers

Company
Product
Description
Supplier Links
650V/Full bridge/IGBT modules - APTGLQ200H65G-Module - Microchip Technology, Inc.
Microchip Technology, Inc.
Chandler, AZ, United States
650V/Full bridge/IGBT modules
APTGLQ200H65G-Module
650V/Full bridge/IGBT modules APTGLQ200H65G-Module
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 200 Silicon type: TRENCH 3 FAST Package: SP6C
  • IGBT 3 fast
  • Low voltage drop
  • Low leakage current
  • Low switching losses
  • Kelvin emitter for easy drive
  • Low stray inductance
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Internal thermistor for temperature monitoring (optional)
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS Compliant

Additional Features

    • Configuration: Full bridge
    • VCES (V): 650
    • VCESat (V): 1.85
    • Current (A) Tc=80C: 200
    • Silicon type: TRENCH 3 FAST
    • Package: SP6C
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number APTGLQ200H65G-Module
Product Name 650V/Full bridge/IGBT modules
Technology IGBT
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