Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTC60AM45BC1G

Description
Features CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies Solar converter
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTC60AM45BC1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies Solar converter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTC60AM45BC1G
Silicon Carbide/Silicon Hybrid Modules APTC60AM45BC1G
Features CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies Solar converter

Features

  • CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Very low stray inductance
  • High level of integration

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low Profile
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • Solar converter
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTC60AM45BC1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTC60AM45BC1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTC60AM45BC1G
MOSFET 3N-CH 600V 49A SP1

MOSFET 3N-CH 600V 49A SP1

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APTC60AM45BC1G APTC60AM45BC1G
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
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