APT46GA90JSC30 is a 900 V, 46 A punch-through IGBT with a co-packaged anti-parallel silicon carbide diode in a SOT-227 package, measuring 38.0 to 38.2 mm in length, 25.2 to 25.4 mm in width, and 11.8 to 12.2 mm in height. It has a continuous collector current rating of 46 A at 110 °C, a total power dissipation of 284 W, and a junction-to-case thermal resistance of 0.44 °C/W for the IGBT. The device features zero reverse recovery, switching safe operating area (SSOA) rated for 136 A at 900 V and 150 °C, and a 2500 V RMS isolation voltage with UL certification E145592. It is RoHS compliant and operates from -55 °C to 150 °C junction temperature.
900 V, 46 A Power MOS 8 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, SOT-227
Features
| Richardson RFPD | |
|---|---|
| Product Category | Transistors |
| Product Number | APT46GA90JSC30 |
| Product Name | Silicon Carbide/Silicon Hybrid Modules |
| Transistor Technology / Material | Silicon Carbide |
