Microchip Technology, Inc. Single FETs, MOSFETs APT40M35JVFR

APT40M35JVFR is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications. It is packaged in the ISOTOP® SOT-227 case with a maximum drain-source voltage of 400V and a continuous drain current of 93A at 25°C. The device has a drain-source on-state resistance of 0.035Ω at VGS=10V and I_D=46.5A, and it features a fast recovery body diode with a reverse recovery time of 300ns at T_J=25°C. The total power dissipation is 700W at 25°C, with a junction-to-case thermal resistance of 0.18°C/W. It is rated for repetitive avalanche energy of 50mJ and single pulse avalanche energy of 3600mJ. The gate-source voltage is rated at ±30V continuous and ±40V transient. The device is UL recognized and operates from -55°C to 150°C.