Microchip Technology, Inc. Single FETs, MOSFETs APT10M07JVR

APT10M07JVR is an N-channel enhancement-mode MOSFET designed for high-power switching applications. It is packaged in an ISOTOP® (SOT-227) case measuring 31.5 mm × 25.2 mm × 14.9 mm with a mounting base. The device has a drain-source voltage rating of 100 V, continuous drain current of 225 A at 25°C, and maximum power dissipation of 700 W. Its on-state resistance is 0.007 Ω at 10 V gate-source voltage, and it is rated for avalanche current and energy up to 225 A and 3600 mJ, respectively. The junction-to-case thermal resistance is 0.18 °C/W, and the device supports isolation of 2500 V RMS. It meets UL 94 V-0 flammability standard and is 100% avalanche tested. Operating and storage junction temperatures range from -55°C to 150°C.