The MS2213 is a silicon NPN bipolar RF power transistor designed for JTIDS pulsed power applications in the 960-1215 MHz range. It features gold metallization and a hermetic package, operates in Class C mode, and delivers a minimum output power of 30 W with 7.8 dB gain at 35 V supply. The device withstands a 15:1 VSWR mismatch, operates with a junction temperature up to +250 °C, and has a case-to-junction thermal resistance of 2.2 °C/W. Collector supply voltage is rated to 40 V, and device current to 3.5 A.
The MS2213 is a silicon NPN bipolar device specifically designed for JTIDS pulsed power applications from 960-1215 MHz. Gold metallization and emitter ballasting assure high reliability under Class C amplifier operation. This device operates over a wide range of pulse widths, duty cycles and temperatures, and can withstand a 15:1 VSWR mismatch under load.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 80-MS2213 |
| Product Name | RF Power Transistor |
| Power Gain | 7.8 dB |
