Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2N7008-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1324602-2N7008-G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bag Standard Package: 1,000 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92-3 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-226-3, TO-92-3 (TO-226AA) ECCN: EAR99 Fake Threat In the Open Market: 84 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: 2N7008 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V RoHS Status: ROHS3 Compliant
Request a Quote
Description
Manufacturer: Microchip Technology Win Source Part Number: 1324602-2N7008-G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bag Standard Package: 1,000 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92-3 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-226-3, TO-92-3 (TO-226AA) ECCN: EAR99 Fake Threat In the Open Market: 84 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: 2N7008 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V RoHS Status: ROHS3 Compliant
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 1324602-2N7008-G is an N-Channel Enhancement-Mode Vertical DMOS FET designed for various applications including motor controls, converters, amplifiers, and power supply circuits. It features a low threshold voltage with a maximum gate threshold voltage of 2.5V at 250 ¬µA, and a drain-to-source breakdown voltage of 60V. The device has a continuous drain current rating of 230 mA at 25¬8C and a maximum on-state drain-source resistance of 7.5Oc at 500 mA and 10V. It operates over a wide temperature range from -55¬8C to +150¬8C, ensuring excellent thermal stability and reliability. The package type is a 3-lead TO-92, suitable for through-hole mounting. This MOSFET is characterized by low input capacitance of 50 pF and fast switching speeds, making it suitable for applications requiring efficient performance.

Datasheet Summary
Powered by GS/AI

The 1324602-2N7008-G is an N-Channel Enhancement-Mode Vertical DMOS FET designed for various applications including motor controls, converters, amplifiers, and power supply circuits. It features a low threshold voltage with a maximum gate threshold voltage of 2.5V at 250 ¬µA, and a drain-to-source breakdown voltage of 60V. The device has a continuous drain current rating of 230 mA at 25¬8C and a maximum on-state drain-source resistance of 7.5Oc at 500 mA and 10V. It operates over a wide temperature range from -55¬8C to +150¬8C, ensuring excellent thermal stability and reliability. The package type is a 3-lead TO-92, suitable for through-hole mounting. This MOSFET is characterized by low input capacitance of 50 pF and fast switching speeds, making it suitable for applications requiring efficient performance.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324602-2N7008-G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324602-2N7008-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324602-2N7008-G
Manufacturer: Microchip Technology Win Source Part Number: 1324602-2N7008-G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bag Standard Package: 1,000 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92-3 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-226-3, TO-92-3 (TO-226AA) ECCN: EAR99 Fake Threat In the Open Market: 84 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: 2N7008 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V RoHS Status: ROHS3 Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1324602-2N7008-G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Bag
Standard Package: 1,000
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-226-3, TO-92-3 (TO-226AA)
ECCN: EAR99
Fake Threat In the Open Market: 84
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: 2N7008
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
MOSFETs - 9163721P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9163721P
MOSFETs 9163721P
MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3

MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3

Supplier's Site
MOSFETs - 9163721 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9163721
MOSFETs 9163721
MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3

MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3

Supplier's Site
MOSFETs - 1704354 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1704354
MOSFETs 1704354
MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3

MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3

Supplier's Site
Single FETs, MOSFETs - 2N7008-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7008-G-ND
Single FETs, MOSFETs 2N7008-G-ND
N-Channel 60V 230mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 60V 230mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
2N7008-G
MOSFET 2N7008-G
MOSFET 60V 7.5Ohm

MOSFET 60V 7.5Ohm

Buy Now Datasheet
Mosfet, N-Ch, 60V, 0.23A, To-92; Transistor Polarity Microchip - 31AC2704 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.23A, To-92; Transistor Polarity Microchip
31AC2704
Mosfet, N-Ch, 60V, 0.23A, To-92; Transistor Polarity Microchip 31AC2704
MOSFET, N-CH, 60V, 0.23A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.23A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7008-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7008-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7008-G
MOSFET N-CH 60V 230MA TO92-3

MOSFET N-CH 60V 230MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324602-2N7008-G 9163721P 9163721 2N7008-G-ND 2N7008-G 31AC2704 2N7008-G
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 0.23A, To-92; Transistor Polarity Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
PD 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-92; SOT3; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-92 TO-92; To-92 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA)
Packing Method Bag Bag
Unlock Full Specs
to access all available technical data