Microchip Technology, Inc. Bipolar Transistor Arrays 2N5796A

The 2N5796A is a PNP dual silicon transistor in a TO-78-6 package, qualified per MIL-PRF-19500/496. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a power dissipation of 0.6 W at 25°C. The device operates and stores within a junction temperature range of -65°C to +175°C. Forward current transfer ratio (hFE) ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current. Turn-on time is 50 µs and turn-off time is 140 µs under specified switching conditions. Input and output capacitances are 25 pF and 8.0 pF respectively. The part meets MIL-PRF-19500/496 qualification standards.