Microchip Technology, Inc. Single Bipolar Transistors 2N3583

The 2N3583 is an NPN silicon power transistor designed for high-voltage switching and amplifier applications, including off-line inverters, motor controls, and DC-DC converters. It is packaged in a hermetically sealed TO-66 case with a maximum height of 24.43 mm and a body diameter of 11.94 mm. The device has a collector-emitter voltage rating of 175 V and a collector-base voltage rating of 250 V, with a continuous collector current of 1 A and a maximum power dissipation of 35 W at 25°C. It supports a junction temperature range of -65°C to 200°C and has a thermal impedance of 5.0°C/W. The transistor features a minimum DC current gain of 10 at 1 A and 10 V, and a collector-emitter saturation voltage of up to 5 V at 0.1 A collector current. It is manufactured using a double diffused planar process with ultrasonically bonded leads for enhanced reliability.