NPN silicon switching transistor for switching applications, available in TO-39 package with dimensions of 7.75 to 8.51 mm in diameter and 8.51 to 9.40 mm in height. Collector-emitter voltage is 50 Vdc, collector current is 800 mA, and total power dissipation is 3.0 W at +25°C. Junction temperature range is -55 to +200 °C. Thermal resistance junction-to-case is 59 °C/W. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 15 mA base current. Qualified per MIL-PRF-19500/251.
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NPN silicon switching transistor for switching applications, available in TO-39 package with dimensions of 7.75 to 8.51 mm in diameter and 8.51 to 9.40 mm in height. Collector-emitter voltage is 50 Vdc, collector current is 800 mA, and total power dissipation is 3.0 W at +25°C. Junction temperature range is -55 to +200 °C. Thermal resistance junction-to-case is 59 °C/W. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 15 mA base current. Qualified per MIL-PRF-19500/251.
