NPN silicon transistor for general-purpose amplification and switching, housed in a TO-5 package. Common emitter current gain (hFE) ranges from 20 to 300 depending on collector current, with a maximum collector current of 500 mA and collector-emitter breakdown voltage of 50 V. Maximum total power dissipation is 0.8 W at 25°C, derating at 4.57 mW/°C above that. Thermal impedance is 58 °C/W. Collector-base breakdown voltage is 75 Vdc. Qualified to MIL-PRF-19500/225.
Bipolar (BJT) Transistor NPN 50V 500mA 800mW Through Hole TO-5
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N1711MS-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
