Microchip Technology, Inc. Single Bipolar Transistors 2N1131L

The 2N1131L is a low-power PNP silicon transistor in a TO-39 package, rated for a collector-emitter voltage of 40 Vdc, a collector-base voltage of 50 Vdc, and a maximum collector current of 600 mAdc. It has a total power dissipation of 0.6 W at 25°C and operates across a temperature range of -65°C to +200°C. The device meets MIL-PRF-19500/177 qualification standards. Current gain (h₏e) ranges from 20 to 45 at 150 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 1.3 V max at 150 mA collector and 15 mA base current.