Microchip Technology, Inc. 256Kb I2C compatible 2-wire Serial EEPROM with 1MHz clock compatibility 24FC256

Description
The Microchip Technology Inc. 24FC256 is a 256Kb (32K x 8) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads up to the 256K boundary. Functional address lines allow up to eight devices on the same bus, for up to 2 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIC, TSSOP, MSOP and DFN packages. Additional Features Reliable EEPROM Memory 32K x 8 (256Kbit) Self-Timed Erase/Write Cycle 64-Byte Page Write Buffer Page Write Time 5 ms Max. Hardware Write-Protect Pin Factory Programming Available Low Power Operating voltage 1.7V to 5.5V Read current 400 uA, max. Standby current 1 uA, max. 2-Wire Serial Interface, I2C™ Compatible Cascadable up to Eight Devices Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce 400 kHz and 1MHz Clock Compatible ESD Protection >4000V Pb-Free and RoHS Compliant
Datasheet
Description
The Microchip Technology Inc. 24FC256 is a 256Kb (32K x 8) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads up to the 256K boundary. Functional address lines allow up to eight devices on the same bus, for up to 2 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIC, TSSOP, MSOP and DFN packages. Additional Features Reliable EEPROM Memory 32K x 8 (256Kbit) Self-Timed Erase/Write Cycle 64-Byte Page Write Buffer Page Write Time 5 ms Max. Hardware Write-Protect Pin Factory Programming Available Low Power Operating voltage 1.7V to 5.5V Read current 400 uA, max. Standby current 1 uA, max. 2-Wire Serial Interface, I2C™ Compatible Cascadable up to Eight Devices Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce 400 kHz and 1MHz Clock Compatible ESD Protection >4000V Pb-Free and RoHS Compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
256Kb I2C compatible 2-wire Serial EEPROM with 1MHz clock compatibility - 24FC256 - Microchip Technology, Inc.
Chandler, AZ, United States
256Kb I2C compatible 2-wire Serial EEPROM with 1MHz clock compatibility
24FC256
256Kb I2C compatible 2-wire Serial EEPROM with 1MHz clock compatibility 24FC256
The Microchip Technology Inc. 24FC256 is a 256Kb (32K x 8) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads up to the 256K boundary. Functional address lines allow up to eight devices on the same bus, for up to 2 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIC, TSSOP, MSOP and DFN packages. Additional Features Reliable EEPROM Memory 32K x 8 (256Kbit) Self-Timed Erase/Write Cycle 64-Byte Page Write Buffer Page Write Time 5 ms Max. Hardware Write-Protect Pin Factory Programming Available Low Power Operating voltage 1.7V to 5.5V Read current 400 uA, max. Standby current 1 uA, max. 2-Wire Serial Interface, I2C™ Compatible Cascadable up to Eight Devices Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce 400 kHz and 1MHz Clock Compatible ESD Protection >4000V Pb-Free and RoHS Compliant

The Microchip Technology Inc. 24FC256 is a 256Kb (32K x 8) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads up to the 256K boundary. Functional address lines allow up to eight devices on the same bus, for up to 2 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIC, TSSOP, MSOP and DFN packages.

Additional Features

    • Reliable EEPROM Memory
      • 32K x 8 (256Kbit)
      • Self-Timed Erase/Write Cycle
      • 64-Byte Page Write Buffer
      • Page Write Time 5 ms Max.
      • Hardware Write-Protect Pin
      • Factory Programming Available
    • Low Power
      • Operating voltage 1.7V to 5.5V
      • Read current 400 uA, max.
      • Standby current 1 uA, max.
    • 2-Wire Serial Interface, I2C™ Compatible
      • Cascadable up to Eight Devices
      • Schmitt Trigger Inputs for Noise Suppression
      • Output Slope Control to Eliminate Ground Bounce
      • 400 kHz and 1MHz Clock Compatible
    • ESD Protection >4000V
    • Pb-Free and RoHS Compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number 24FC256
Product Name 256Kb I2C compatible 2-wire Serial EEPROM with 1MHz clock compatibility
Memory Category EEPROM
Data Rate 1 MHz
Data Retention 200 years
Endurance 1000000 Write/Erase Cycles
Unlock Full Specs
to access all available technical data

Similar Products

 - LTC2933CDHD#PBF - Rochester Electronics
Infineon Technologies AG
Specs
Memory Category EEPROM
Package Type DFN16
View Details
SDRAM - 1882600 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - MT5C2568 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details