Microchip Technology, Inc. Memory 24CS512T-E/Q6B66KVAO

Description
EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-UDFN (2x3)
Request a Quote Datasheet
Description
EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-UDFN (2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 150-24CS512T-E/Q6B66KVAOTR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-UDFN (2x3)

EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-UDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 24CS512T-E/Q6B66KVAO - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
24CS512T-E/Q6B66KVAO
Integrated Circuits (ICs) - Memory 24CS512T-E/Q6B66KVAO
512K I2C SERIAL EEPROM, EXT, 8-U

512K I2C SERIAL EEPROM, EXT, 8-U

Supplier's Site
Memory - 24CS512T-E/Q6B66KVAO - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-UDFN (2x3)

EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-UDFN (2x3)

Buy Now Datasheet
512K I2C SERIAL EEPROM, EXT, 8-U

512K I2C SERIAL EEPROM, EXT, 8-U

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 150-24CS512T-E/Q6B66KVAOTR-ND 24CS512T-E/Q6B66KVAO 24CS512T-E/Q6B66KVAO 24CS512T-E/Q6B66KVAO
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-UFDFN Exposed Pad 8-UFDFN Exposed Pad
Supply Voltage 1.7V ~ 5.5V 1.7V ~ 5.5V 1.7V ~ 5.5V
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