Microchip Technology, Inc. Memory 24CS512T-E/MUY

Description
EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-UDFN (2x3)
Datasheet
Description
EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-UDFN (2x3)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 24CS512T-E/MUY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-UDFN (2x3)

EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-UDFN (2x3)

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512K 3.4MHZ I2C SERIAL EEPROM

512K 3.4MHZ I2C SERIAL EEPROM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 24CS512T-E/MUY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
24CS512T-E/MUY
Integrated Circuits (ICs) - Memory 24CS512T-E/MUY
512K 3.4MHZ I2C SERIAL EEPROM

512K 3.4MHZ I2C SERIAL EEPROM

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 24CS512T-E/MUY 24CS512T-E/MUY 24CS512T-E/MUY
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 400 ns 400 ns 400 ns
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 512 kbits 512 kbits 512 kbits
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