Dual N-channel MOSFET in SOT-563 package, designed for low-power switching applications. The device features a 100 V drain-source voltage rating, continuous drain current of 0.2 A at 25°C, and a junction temperature range of -55°C to +150°C. Thermal resistance is 350°C/W junction to ambient. Input capacitance is 34 pF, and gate-source charge is 0.6 nC. The epoxy compound meets UL 94 V-0 flammability rating and the part is halogen-free and RoHS compliant. The SOT-563 package dimensions are 1.30 mm max length, 1.70 mm max width, and 0.65 mm max height.
DUAL N-CHANNEL MOSFET,SOT-563
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-SIX3K4N10L-TPTR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | SOT-563, SOT-666 |