Micro Commercial Components Corp. Single FETs, MOSFETs SICW080N120H-BP

SICW080N120H is a silicon carbide N-channel MOSFET designed for high-speed switching in solar inverters, uninterruptible power supplies, and motor drives. It is packaged in a TO-247AB case, with dimensions of 19.62-20.22 mm in length and 20.70-21.30 mm between drain pins. The device supports a maximum drain-source voltage of 1200 V and a continuous drain current of 33 A at 25°C case temperature. Operating junction temperature ranges from -55°C to +175°C, with a typical junction-to-case thermal resistance of 0.67°C/W. The gate-source voltage is rated from -5 V to +20 V for normal operation, and the on-resistance is 80-110 mΩ at 25°C with 20 V gate voltage. It is halogen-free and RoHS compliant.