Micro Commercial Components Corp. Single FETs, MOSFETs SICW060N065H-BP

SICW060N065H is a silicon carbide N-channel MOSFET designed for high-efficiency switching in applications such as solar inverters, uninterruptible power supplies, and motor drives. It is housed in a TO-247AB package with dimensions of 20.70 to 21.30 mm in length and 4.80 to 5.20 mm in lead spacing. The device has a drain-source voltage rating of 650 V, a continuous drain current of 60 A at 25°C, and a drain-source on-resistance of 60 to 75 mΩ depending on temperature. It operates with a junction temperature range of -55°C to +175°C and features a thermal resistance junction-to-case of 0.6°C/W. The part is RoHS compliant and halogen-free. Switching performance is characterized by low turn-on and turn-off energy losses of 20 µJ and 27 µJ, respectively, at specified conditions. Avalanche energy withstand is rated at 1.6 J under single-pulse conditions.