Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5 AIGBE40N65F5

Description
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-7), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed 650V break-down voltage, 40A nominal current Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package as 7-lead variant for low assembly costs, higher power density and optimized creepage capability Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive) Applications Electric power steering (EPS) HVAC control module On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE9471-3ES V33 | OPTIREG™ Lite SBC AIDK12S65C5 | CoolSiC™ Schottky Diodes BAS52-02V | Schottky Diodes BSS84P | Small signal/small power MOSFET AIDK08S65C5 | CoolSiC™ Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC AIDK12S65C5 | CoolSiC™ Schottky Diodes BAS52-02V | Schottky Diodes BSS84P | Small signal/small power MOSFET AIDK08S65C5 | CoolSiC™ Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC 1 2
  • Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5 - AIGBE40N65F5 - Infineon Technologies AG
    Infineon Technologies AG
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Description
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-7), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed 650V break-down voltage, 40A nominal current Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package as 7-lead variant for low assembly costs, higher power density and optimized creepage capability Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive) Applications Electric power steering (EPS) HVAC control module On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE9471-3ES V33 | OPTIREG™ Lite SBC AIDK12S65C5 | CoolSiC™ Schottky Diodes BAS52-02V | Schottky Diodes BSS84P | Small signal/small power MOSFET AIDK08S65C5 | CoolSiC™ Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC AIDK12S65C5 | CoolSiC™ Schottky Diodes BAS52-02V | Schottky Diodes BSS84P | Small signal/small power MOSFET AIDK08S65C5 | CoolSiC™ Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC 1 2
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Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5 - AIGBE40N65F5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5
AIGBE40N65F5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5 AIGBE40N65F5
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-7), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed 650V break-down voltage, 40A nominal current Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package as 7-lead variant for low assembly costs, higher power density and optimized creepage capability Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive) Applications Electric power steering (EPS) HVAC control module On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE9471-3ES V33 | OPTIREG™ Lite SBC AIDK12S65C5 | CoolSiC™ Schottky Diodes BAS52-02V | Schottky Diodes BSS84P | Small signal/small power MOSFET AIDK08S65C5 | CoolSiC™ Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC AIDK12S65C5 | CoolSiC™ Schottky Diodes BAS52-02V | Schottky Diodes BSS84P | Small signal/small power MOSFET AIDK08S65C5 | CoolSiC™ Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC 1 2

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.

Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-7), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.


Summary of Features

  • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed
  • 650V break-down voltage, 40A nominal current
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance to Infineon quality standards
  • Max junction temperature 175 °C
  • Highest efficiency
    • very low conduction losses
    • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package as 7-lead variant for low assembly costs, higher power density and optimized creepage capability
  • Extremely robust

Potential Applications

  • On-Board Charger (mainly in the PFC stage)
  • DC-DC or DC-AC
  • Auxiliary drive (e.g. Motor drive)

Applications

  • Electric power steering (EPS)
  • HVAC control module
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • TLE9471-3ES V33 |
    OPTIREG™ Lite SBC
  • AIDK12S65C5 |
    CoolSiC™ Schottky Diodes
  • BAS52-02V |
    Schottky Diodes
  • BSS84P |
    Small signal/small power MOSFET
  • AIDK08S65C5 |
    CoolSiC™ Schottky Diodes
  • IPBE65R115CFD7A |
    Automotive MOSFET
  • BSS159N |
    N-Channel Depletion Mode MOSFET
  • TLE9471-3ES V33 |
    OPTIREG™ Lite SBC
  • AIDK12S65C5 |
    CoolSiC™ Schottky Diodes
  • BAS52-02V |
    Schottky Diodes
  • BSS84P |
    Small signal/small power MOSFET
  • AIDK08S65C5 |
    CoolSiC™ Schottky Diodes
  • IPBE65R115CFD7A |
    Automotive MOSFET
  • BSS159N |
    N-Channel Depletion Mode MOSFET
  • TLE9471-3ES V33 |
    OPTIREG™ Lite SBC

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIGBE40N65F5
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5
VCE(on) 650 volts
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