Micro Commercial Components Corp. FET, MOSFET Arrays SI3439KU6-TP

The SI3439KU6 is a dual N- and P-channel MOSFET in a DFN1010B-6 package, designed for low-voltage switching applications. It has a drain-source voltage rating of 20 V for the N-channel and -20 V for the P-channel, with continuous drain currents of 0.75 A and -0.52 A at 25°C, respectively. The device features a thermal resistance of 360°C/W, operates from -55°C to +150°C, and is RoHS compliant. The package dimensions are 1.05 mm × 1.05 mm with a maximum height of 0.53 mm. The N-channel has a typical on-resistance of 250 mΩ at 4.5 V gate drive, while the P-channel has 855 mΩ at -4.5 V. Both channels include integrated body diodes with reverse recovery times of 5.5 ns and 32 ns, respectively.