Micro Commercial Components Corp. Single FETs, MOSFETs SI2312HE3-TP

The SI2312HE3-TP is an AEC-Q101 qualified N-channel MOSFET in a SOT-23 package, designed for low-voltage switching applications. It has a maximum drain-source voltage of 20 V and a continuous drain current of 4 A at 70°C. The device features a maximum ON-resistance of 35.6 mΩ at 2.5 V gate bias and 4.7 A drain current, with a total power dissipation of 1.25 W. The junction temperature range operates from -55°C to +150°C, and thermal resistance is 100°C/W. It is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability rating.