Micro Commercial Components Corp. Single Bipolar Transistors S8050-D-BP

NPN silicon transistor in TO-92 package with 0.5A collector current, 40V collector-base voltage, and 25V collector-emitter voltage, capable of 0.625W power dissipation at 25°C. Operating and storage junction temperature range is -55°C to +150°C. DC current gain (hFE) ranges from 160 to 300 for the D variant. Collector-emitter saturation voltage is 0.6V at 500mA collector current and 50mA base current. Transistor transition frequency is 150MHz. Case material is molded plastic with UL 94V-0 flammability rating and RoHS compliant finish. MSL rating is 1.