PNP silicon transistor in TO-92 package with 60 V collector-base voltage, 600 mA collector current, and 625 mW power dissipation, rated for junction temperatures from -55°C to +150°C. Features a transition frequency of 200 MHz, DC current gain (hFE) range of 200-300, and complies with UL 94 V-0 flammability rating and RoHS standards. Moisture sensitivity level is 1. The part is lead-free and halogen-free options are available.
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MPS2907A-H-APTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |