60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150
Win Source Part Number: 1006355-CSD88539NDT
Category: Discrete Semiconductor Products>Transistors
Series: NexFET™
Package: Tape & Reel
Standard Package: 250
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power - Max: 2.1W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Texas Instruments
Other Names: 296-37796-2,296-3779
Base Product Number: CSD88539
MOSFET 2N-CH 60V 15A 8SOIC
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150 Product overview: CSD88539NDT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 28 mOhm, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 28 mOhm, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD88539NDT can be used for catalog matching and distributor lookup.
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| Texas Instruments | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD88539NDT | 1006355-CSD88539NDT | CSD88539NDT | 289-CSD88539NDT | 296-37796-1-ND | CSD88539NDT | CSD88539NDT |
| Product Name | CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | N-Channel Dual 28 mOhm SOIC MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 46000 milliamps | 15000 milliamps | |||||
| QG | 7.2 nC |
