Micro Commercial Components Corp. IGBT Modules MIP75R12E2ATN-BP

MIP75R12E2ATN-BP is an IGBT module with an integrated fast and soft recovery anti-parallel diode, designed for motor drivers, servo amplifiers, and UPS applications. The module features a 1200 V collector-emitter voltage rating, 75 A continuous collector current, and a maximum junction temperature of 175℃. It supports a 10 μs short-circuit capability of 300 A. The IGBT exhibits a collector-emitter saturation voltage of 1.95 V at 25℃ and 2.30 V at 150℃, with a gate-emitter threshold voltage of 5 to 6.5 V. The diode has a forward voltage of 1.95 V at 25℃ and 1.70 V at 150℃, with a reverse recovery charge of 2.1 μC at 25℃. Total power dissipation is rated at 470 W. The case is low-inductance and epoxy meets UL 94 V-0. The device is RoHS compliant with a lead-free finish.