Micro Commercial Components Corp. Single FETs, MOSFETs MCU18P10YHE3-TP

The MCU18P10YHE3 is a P-channel MOSFET with split gate trench technology, designed for switching applications. It is packaged in a surface-mount case measuring 10.40 mm by 6.70 mm, with a thickness of 2.90 mm. The device has a drain-source voltage rating of -100 V, a continuous drain current of -18 A at 25°C, and a total power dissipation of 73.5 W. Its thermal resistance is 1.7°C/W from junction to case and 50°C/W from junction to ambient. The MOSFET is AEC-Q101 qualified, RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. Operating junction temperature ranges from -55°C to +150°C.