P-channel MOSFET in a DPAK (TO-252) package, rated for a drain-source voltage of -150 V and continuous drain current of -13 A at 25°C, with a maximum junction temperature of +150°C. The device has a thermal resistance of 50°C/W from junction to ambient and 2.2°C/W from junction to case. It features split gate trench technology, is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. The gate-source voltage rating is ±20 V, and the single-pulse avalanche energy is 59 mJ.
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P-channel MOSFET in a DPAK (TO-252) package, rated for a drain-source voltage of -150 V and continuous drain current of -13 A at 25°C, with a maximum junction temperature of +150°C. The device has a thermal resistance of 50°C/W from junction to ambient and 2.2°C/W from junction to case. It features split gate trench technology, is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. The gate-source voltage rating is ±20 V, and the single-pulse avalanche energy is 59 mJ.
