MCTL1D2N10Y is an N-channel MOSFET using Split Gate Trench technology in a TOLL-8L package, rated for 100 V drain-source voltage and continuous drain current of 320 A at 25°C. It features a low on-resistance of 1.0 to 1.2 mΩ at 10 V gate-source voltage, thermal resistance of 0.4°C/W junction-to-case, and operates from -55°C to +175°C. The device meets UL 94 V-0 flammability rating and is RoHS compliant. Peak pulsed drain current is 1280 A, with single-pulsed avalanche energy of 2400 mJ. Gate charge totals 156 nC, with gate-source charge of 42 nC. The package dimensions range from 2.20 to 11.88 mm across defined points. Epoxy complies with halogen-free "Green" standards per <900 ppm bromine and chlorine.
N-CHANNEL MOSFET,TOLL-8L
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCTL1D2N10Y-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |