Micro Commercial Components Corp. Single FETs, MOSFETs MCTL1D2N10Y-TP

Description
N-CHANNEL MOSFET,TOLL-8L
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Description
N-CHANNEL MOSFET,TOLL-8L
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Datasheet
Datasheet Summary
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MCTL1D2N10Y is an N-channel MOSFET using Split Gate Trench technology in a TOLL-8L package, rated for 100 V drain-source voltage and continuous drain current of 320 A at 25°C. It features a low on-resistance of 1.0 to 1.2 mΩ at 10 V gate-source voltage, thermal resistance of 0.4°C/W junction-to-case, and operates from -55°C to +175°C. The device meets UL 94 V-0 flammability rating and is RoHS compliant. Peak pulsed drain current is 1280 A, with single-pulsed avalanche energy of 2400 mJ. Gate charge totals 156 nC, with gate-source charge of 42 nC. The package dimensions range from 2.20 to 11.88 mm across defined points. Epoxy complies with halogen-free "Green" standards per <900 ppm bromine and chlorine.

Datasheet Summary
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MCTL1D2N10Y is an N-channel MOSFET using Split Gate Trench technology in a TOLL-8L package, rated for 100 V drain-source voltage and continuous drain current of 320 A at 25°C. It features a low on-resistance of 1.0 to 1.2 mΩ at 10 V gate-source voltage, thermal resistance of 0.4°C/W junction-to-case, and operates from -55°C to +175°C. The device meets UL 94 V-0 flammability rating and is RoHS compliant. Peak pulsed drain current is 1280 A, with single-pulsed avalanche energy of 2400 mJ. Gate charge totals 156 nC, with gate-source charge of 42 nC. The package dimensions range from 2.20 to 11.88 mm across defined points. Epoxy complies with halogen-free "Green" standards per <900 ppm bromine and chlorine.

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Single FETs, MOSFETs - 353-MCTL1D2N10Y-TPTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
353-MCTL1D2N10Y-TPTR-ND
Single FETs, MOSFETs 353-MCTL1D2N10Y-TPTR-ND
N-CHANNEL MOSFET,TOLL-8L

N-CHANNEL MOSFET,TOLL-8L

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCTL1D2N10Y-TPTR-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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