Micro Commercial Components Corp. FET, MOSFET Arrays MCGD018NP03L-TP

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MCGD018NP03L-TP is a dual N- and P-channel MOSFET in a DFN3333 package measuring 3.35 mm × 3.35 mm, designed for low-voltage switching applications. The device operates with a junction temperature range of -55°C to +150°C and has a thermal resistance of 62.5°C/W junction to ambient when mounted on a 1 in² FR-4 board with 2 oz copper. The N-channel MOSFET supports a maximum Drain-Source Voltage of 30 V and continuous drain current of 20 A at 25°C, while the P-channel MOSFET supports -30 V and -20 A under the same conditions. Both channels feature a gate-source voltage rating of ±20 V, and the total power dissipation is 27 W for the N-channel and 22 W for the P-channel. The device is RoHS compliant, halogen-free, meets UL 94 V-0 flammability rating, and is moisture sensitive level 3.

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MCGD018NP03L-TP is a dual N- and P-channel MOSFET in a DFN3333 package measuring 3.35 mm × 3.35 mm, designed for low-voltage switching applications. The device operates with a junction temperature range of -55°C to +150°C and has a thermal resistance of 62.5°C/W junction to ambient when mounted on a 1 in² FR-4 board with 2 oz copper. The N-channel MOSFET supports a maximum Drain-Source Voltage of 30 V and continuous drain current of 20 A at 25°C, while the P-channel MOSFET supports -30 V and -20 A under the same conditions. Both channels feature a gate-source voltage rating of ±20 V, and the total power dissipation is 27 W for the N-channel and 22 W for the P-channel. The device is RoHS compliant, halogen-free, meets UL 94 V-0 flammability rating, and is moisture sensitive level 3.

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FET, MOSFET Arrays - 353-MCGD018NP03L-TPTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
353-MCGD018NP03L-TPTR-ND
FET, MOSFET Arrays 353-MCGD018NP03L-TPTR-ND
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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCGD018NP03L-TPTR-ND
Product Name FET, MOSFET Arrays
Package Type 8-PowerVDFN
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