The MCDS04N60 is an N-channel MOSFET rated for 600 V drain-source voltage and 4.0 A continuous drain current, housed in a TO-251S package with dimensions of 6.50-6.70 mm in length and 10.40-11.00 mm in height. It features a drain-source on-resistance of 2-3 Ω at 10 V gate voltage, a total gate charge of 5-10 nC, and a specified avalanche energy of 260 mJ. The device operates across a junction temperature range of -55°C to +150°C, meets UL 94 V-0 flammability rating, and is RoHS compliant with a 'P' suffix. Moisture sensitivity level is 1, and halogen-free versions are available with the '-HF' suffix.
N-Channel 600V 4A Through Hole TO-251S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCDS04N60-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |