Micro Commercial Components Corp. Single FETs, MOSFETs MCDS04N60-TP

Description
N-Channel 600V 4A Through Hole TO-251S
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Description
N-Channel 600V 4A Through Hole TO-251S
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Datasheet
Datasheet Summary
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The MCDS04N60 is an N-channel MOSFET rated for 600 V drain-source voltage and 4.0 A continuous drain current, housed in a TO-251S package with dimensions of 6.50-6.70 mm in length and 10.40-11.00 mm in height. It features a drain-source on-resistance of 2-3 Ω at 10 V gate voltage, a total gate charge of 5-10 nC, and a specified avalanche energy of 260 mJ. The device operates across a junction temperature range of -55°C to +150°C, meets UL 94 V-0 flammability rating, and is RoHS compliant with a 'P' suffix. Moisture sensitivity level is 1, and halogen-free versions are available with the '-HF' suffix.

Datasheet Summary
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The MCDS04N60 is an N-channel MOSFET rated for 600 V drain-source voltage and 4.0 A continuous drain current, housed in a TO-251S package with dimensions of 6.50-6.70 mm in length and 10.40-11.00 mm in height. It features a drain-source on-resistance of 2-3 Ω at 10 V gate voltage, a total gate charge of 5-10 nC, and a specified avalanche energy of 260 mJ. The device operates across a junction temperature range of -55°C to +150°C, meets UL 94 V-0 flammability rating, and is RoHS compliant with a 'P' suffix. Moisture sensitivity level is 1, and halogen-free versions are available with the '-HF' suffix.

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Single FETs, MOSFETs - 353-MCDS04N60-TPTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
353-MCDS04N60-TPTR-ND
Single FETs, MOSFETs 353-MCDS04N60-TPTR-ND
N-Channel 600V 4A Through Hole TO-251S

N-Channel 600V 4A Through Hole TO-251S

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCDS04N60-TPTR-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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