The MCB3D2N04YQ is an automotive-qualified N-channel MOSFET with split gate trench technology, housed in a D2-PAK package measuring 16.20 mm x 15.87 mm. It has a drain-source voltage rating of 40 V, continuous drain current of 138 A at 25°C, and a total power dissipation of 107 W. The device features a junction-to-case thermal resistance of 1.4°C/W and a junction-to-ambient thermal resistance of 40°C/W on a 1 in² FR-4 board. It meets AEC-Q101 qualification, is halogen-free, RoHS compliant, and supports an operating junction temperature range from -55°C to +175°C. The gate threshold voltage ranges from 2.0 V to 3.6 V, and the on-resistance is 2.5 to 3.2 mΩ at 10 V gate voltage.
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The MCB3D2N04YQ is an automotive-qualified N-channel MOSFET with split gate trench technology, housed in a D2-PAK package measuring 16.20 mm x 15.87 mm. It has a drain-source voltage rating of 40 V, continuous drain current of 138 A at 25°C, and a total power dissipation of 107 W. The device features a junction-to-case thermal resistance of 1.4°C/W and a junction-to-ambient thermal resistance of 40°C/W on a 1 in² FR-4 board. It meets AEC-Q101 qualification, is halogen-free, RoHS compliant, and supports an operating junction temperature range from -55°C to +175°C. The gate threshold voltage ranges from 2.0 V to 3.6 V, and the on-resistance is 2.5 to 3.2 mΩ at 10 V gate voltage.
