Micro Commercial Components Corp. Single FETs, MOSFETs MCB220N04YHE3-TP

Description
POWER MOSFET
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Description
POWER MOSFET
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Datasheet
Datasheet Summary
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MCB220N04YHE3 is an AEC-Q101 qualified N-channel MOSFET using Split Gate Trench technology, housed in a D2-PAK package measuring 15.87 mm x 14.60 mm. It rated for a continuous drain current of 220 A at 25°C and 156 A at 100°C, with a drain-source voltage of 40 V and a gate-source voltage of ±20 V. The device dissipates up to 250 W, with a junction-to-case thermal resistance of 0.6°C/W and junction-to-ambient of 45°C/W. Operating junction temperature ranges from -55°C to +175°C. It meets UL 94 V-0 flammability rating, is halogen-free, and RoHS compliant. The on-resistance is 2.6 mΩ at 10 V gate voltage and 80 A drain current.

Datasheet Summary
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MCB220N04YHE3 is an AEC-Q101 qualified N-channel MOSFET using Split Gate Trench technology, housed in a D2-PAK package measuring 15.87 mm x 14.60 mm. It rated for a continuous drain current of 220 A at 25°C and 156 A at 100°C, with a drain-source voltage of 40 V and a gate-source voltage of ±20 V. The device dissipates up to 250 W, with a junction-to-case thermal resistance of 0.6°C/W and junction-to-ambient of 45°C/W. Operating junction temperature ranges from -55°C to +175°C. It meets UL 94 V-0 flammability rating, is halogen-free, and RoHS compliant. The on-resistance is 2.6 mΩ at 10 V gate voltage and 80 A drain current.

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Single FETs, MOSFETs - 353-MCB220N04YHE3-TPTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
353-MCB220N04YHE3-TPTR-ND
Single FETs, MOSFETs 353-MCB220N04YHE3-TPTR-ND
POWER MOSFET

POWER MOSFET

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCB220N04YHE3-TPTR-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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