N-channel MOSFET in DFN5060 package, rated for 60 V drain-source voltage and 200 A continuous drain current at 25°C, with a maximum junction temperature of 175°C. The device features split gate trench technology, low on-resistance of 2.5 mΩ at 4.5 V gate-source voltage and 30 A drain current, and a total gate charge of 51.6 nC. Thermal resistance is 0.53°C/W junction to case and 50°C/W junction to ambient. Package dimensions are 6.35 mm maximum length, 5.64 mm maximum width, and 1.20 mm maximum height. RoHS compliant and halogen-free.
N-CHANNEL MOSFET,DFN5060
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCACL2D4N06YL-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |